BSH111BKR
BSH111BKR
Part Number BSH111BKR Description MOSFET N-CH 55V SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB
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BSH111BKR - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSH111BK Standard Package 1 Manufacturer Nexperia USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 4Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 30V FET Feature - Power Dissipation (Max) 302mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3
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