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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN3016LSS-13
Diodes Incorporated, N-Channel 30V 10.3A (Ta) 1.5W (Ta) Surface Mount 8-SO,
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IRF620PBF
Vishay Siliconix, N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB,
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STW12NK90Z
STMicroelectronics, N-Channel 900V 11A (Tc) 230W (Tc) Through Hole TO-247-3, SuperMESH™
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SUP50010E-GE3
Vishay Siliconix, N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
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BSP129H6327XTSA1
Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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FQB34N20TM-AM002
ON Semiconductor, N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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SIS434DN-T1-GE3
Vishay Siliconix, N-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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TSM60NB600CP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 7A (Tc) 63W (Tc) Surface Mount TO-252, (D-Pak),
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SI4456DY-T1-E3
Vishay Siliconix, N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
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FQB33N10TM
ON Semiconductor, N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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IPA90R500C3XKSA1
Infineon Technologies, N-Channel 900V 11A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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BS270
ON Semiconductor, N-Channel 60V 400mA (Ta) 625mW (Ta) Through Hole TO-92-3,
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