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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDB0190N807L
ON Semiconductor, N-Channel 80V 270A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7, PowerTrench®
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DMT6015LSS-13
Diodes Incorporated, N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO,
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TN2504N8-G
Microchip Technology, N-Channel 40V 890mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
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BSZ440N10NS3GATMA1
Infineon Technologies, N-Channel 100V 5.3A (Ta), 18A (Tc) 29W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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FDG410NZ
ON Semiconductor, N-Channel 20V 2.2A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
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AUIRFSL6535
Infineon Technologies, N-Channel 300V 19A (Tc) 210W (Tc) Through Hole PG-TO262-3-901, Automotive, AEC-Q101, HEXFET®
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2SK3018-TP
Micro Commercial Co, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount SOT-323,
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PSMN3R0-60PS,127
Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Through Hole TO-220AB,
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IXFA6N120P
IXYS, N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™, PolarP2™
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STW88N65M5-4
STMicroelectronics, N-Channel 650V 84A (Tc) 450W (Tc) Through Hole TO-247-4L, MDmesh™ M5
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NTTFS4C06NTAG
ON Semiconductor, N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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IRLR024TRPBF
Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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