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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5C430NT1G
ON Semiconductor, N-Channel 40V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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FDD120AN15A0
ON Semiconductor, N-Channel 150V 2.8A (Ta), 14A (Tc) 65W (Tc) Surface Mount DPAK, PowerTrench®
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NTD18N06LT4G
ON Semiconductor, N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount DPAK,
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SIHH11N60EF-T1-GE3
Vishay Siliconix, N-Channel 600V 11A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8,
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IXTQ36N30P
IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-3P, PolarHT™
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DMT10H025SSS-13
Diodes Incorporated, N-Channel 100V 7.4A (Ta) 1.4W (Ta) Surface Mount 8-SO,
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TPHR8504PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 40V 150A (Tc) 1W (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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PSMN7R0-30YL,115
Nexperia USA Inc., N-Channel 30V 76A (Tc) 51W (Tc) Surface Mount LFPAK56, Power-SO8,
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SIHB6N65E-GE3
Vishay Siliconix, N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263),
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ZXMN3B01FTA
Diodes Incorporated, N-Channel 30V 1.7A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
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IRF530PBF
Vishay Siliconix, N-Channel 100V 14A (Tc) 88W (Tc) Through Hole TO-220AB,
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NTR5103NT1G
ON Semiconductor, N-Channel 60V 260mA (Ta) 300mW (Ta) Surface Mount SOT-23-3 (TO-236),
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