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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR4105ZPbF, IRFU4105ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN2005LP4K-7
Diodes Incorporated, N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3,
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NVMFS5C673NLWFAFT1G
ON Semiconductor, N-Channel 60V 50A (Tc) 46W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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RSQ015N06TR
Rohm Semiconductor, N-Channel 60V 1.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),
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STP3NK50Z
STMicroelectronics, N-Channel 500V 2.3A (Tc) 45W (Tc) Through Hole TO-220AB, SuperMESH™
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2SK3019TL
Rohm Semiconductor, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount EMT3,
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IXTP08N50D2
IXYS, N-Channel 500V 800mA (Tc) 60W (Tc) Through Hole TO-220AB,
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TSM60NB380CF C0G
Taiwan Semiconductor Corporation, N-Channel 600V 11A (Tc) 62.5W (Tc) Through Hole ITO-220S,
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FQPF16N25C
ON Semiconductor, N-Channel 250V 15.6A (Tc) 43W (Tc) Through Hole TO-220F, QFET®
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IRFR7446TRPBF
Infineon Technologies, N-Channel 40V 56A (Tc) 98W (Tc) Surface Mount D-Pak, HEXFET®, StrongIRFET™
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BUK7660-100A,118
Nexperia USA Inc., N-Channel 100V 26A (Tc) 106W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IRF8302MTRPBF
Infineon Technologies, N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®
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SIR626DP-T1-RE3
Vishay Siliconix, N-Channel 60V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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