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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_9014
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD19P06-60L_T4GE3
Vishay Siliconix, P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
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DMP1081UCB4-7
Diodes Incorporated, P-Channel 12V 3A (Ta), 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,
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SI4455DY-T1-GE3
Vishay Siliconix, P-Channel 150V 2A (Ta) 5.9W (Tc) Surface Mount 8-SO, TrenchFET®
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IRF7410TRPBF
Infineon Technologies, P-Channel 12V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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SSM6J507NU,LF
Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
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RSJ151P10TL
Rohm Semiconductor, P-Channel 100V 15A (Tc) 1.35W (Ta), 50W (Tc) Surface Mount LPTS (SC-83),
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RT1A060APTR
Rohm Semiconductor, P-Channel 12V 6A (Ta) 600mW (Ta) Surface Mount 8-TSST,
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NTJS3151PT1G
ON Semiconductor, P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363,
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SIA483DJ-T1-GE3
Vishay Siliconix, P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
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IRFU9120PBF
Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
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DMP4065SQ-7
Diodes Incorporated, P-Channel 40V 2.4A (Ta) 720mW (Ta) Surface Mount SOT-23,
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SI8409DB-T1-E1
Vishay Siliconix, P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®
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