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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_9014 Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI2301A-TP Micro Commercial Co, P-Channel 20V 2.8A 1.25W Surface Mount SOT-23,
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SSM3J15FU,LF Toshiba Semiconductor and Storage, P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI
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IRFD9120PBF Vishay Siliconix, P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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FDC634P ON Semiconductor, P-Channel 20V 3.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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FDC658P ON Semiconductor, P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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PMFPB8032XP,115 Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),
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PMPB33XP,115 Nexperia USA Inc., P-Channel 20V 5.5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,
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VP3203N8-G Microchip Technology, P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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DMP21D5UFB4-7B Diodes Incorporated, P-Channel 20V 700mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3,
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SQM40081EL_GE3 Vishay Siliconix, P-Channel 40V 50A (Tc) 107W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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FQU17P06TU ON Semiconductor, P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®
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SSM3J355R,LF Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
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