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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_9214
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI6415DQ-T1-E3
Vishay Siliconix, P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP, TrenchFET®
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IRFU9024PBF
Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
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NVMS5P02R2G
ON Semiconductor, P-Channel 20V 3.95A (Ta) Surface Mount 8-SOIC,
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SIS427EDN-T1-GE3
Vishay Siliconix, P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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SQS405EN-T1_GE3
Vishay Siliconix, P-Channel 12V 16A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®
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SQM120P06-07L_GE3
Vishay Siliconix, P-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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SSM6J501NU,LF
Toshiba Semiconductor and Storage, P-Channel 20V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
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IRF9540STRLPBF
Vishay Siliconix, P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,
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IRFR9010TRPBF
Vishay Siliconix, P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak,
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IXTH48P20P
IXYS, P-Channel 200V 48A (Tc) 462W (Tc) Through Hole TO-247 (IXTH), PolarP™
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IXTH8P50
IXYS, P-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH),
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DMP2006UFG-7
Diodes Incorporated, P-Channel 20V 17.5A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,
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