IPD80P03P4L07ATMA1
IPD80P03P4L07ATMA1
Part Number IPD80P03P4L07ATMA1
Description MOSFET P-CH 30V 80A TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD80P03P4L07ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80P03P4L07ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80P03P4L07ATMA1.
We are offering IPD80P03P4L07ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD80P03P4L07ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD80P03P4L-07
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
FET Feature -
Power Dissipation (Max) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD80P03P4L07ATMA1 - Related ProductsMore >>
TP0610T-G
Microchip Technology, P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),
View
FDMA008P20LZ
ON Semiconductor, P-Channel 20V 12A (Ta) 2.4W (Ta) Surface Mount 6-PQFN (2x2),
View
SI4825DDY-T1-GE3
Vishay Siliconix, P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI2309CDS-T1-GE3
Vishay Siliconix, P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SI2323DS-T1-GE3
Vishay Siliconix, P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
NTR4171PT1G
ON Semiconductor, P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SI7431DP-T1-E3
Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FQD4P40TM
ON Semiconductor, P-Channel 400V 2.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
View
SI1469DH-T1-GE3
Vishay Siliconix, P-Channel 20V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
IRF9393TRPBF
Infineon Technologies, P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SQ4483EY-T1_GE3
Vishay Siliconix, P-Channel 30V 30A (Tc) 7W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®
View
SSM3J144TU,LF
Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
IPD80P03P4L07ATMA1 - Tags