SI6415DQ-T1-GE3
SI6415DQ-T1-GE3
Part Number SI6415DQ-T1-GE3 Description MOSFET P-CH 30V 6.5A 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP
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SI6415DQ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si6415DQ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 19mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width)
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