SI8401DB-T1-E1
SI8401DB-T1-E1
Part Number SI8401DB-T1-E1 Description MOSFET P-CH 20V 3.6A 2X2 4-MFP Package / Case 4-XFBGA, CSPBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
To learn about the specification of SI8401DB-T1-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8401DB-T1-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8401DB-T1-E1.
We are offering SI8401DB-T1-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI8401DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8401DB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.47W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA, CSPBGA
SI8401DB-T1-E1 - Related ProductsMore >>
SSM3J338R,LF Toshiba Semiconductor and Storage, P-Channel 12V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
View
FQP9P25 ON Semiconductor, P-Channel 250V 9.4A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®
View
SI4497DY-T1-GE3 Vishay Siliconix, P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI3401A-TP Micro Commercial Co, P-Channel 30V 4.2A 400mW Surface Mount SOT-23,
View
SI4431CDY-T1-E3 Vishay Siliconix, P-Channel 30V 9A (Tc) 4.2W (Tc) Surface Mount 8-SO, TrenchFET®
View
IRF9540NPBF Infineon Technologies, P-Channel 100V 23A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®
View
IXTH50P10 IXYS, P-Channel 100V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH),
View
SUP70101EL-GE3 Vishay Siliconix, P-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
View
SQ3427AEEV-T1_GE3 Vishay Siliconix, P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®
View
NTF5P03T3G ON Semiconductor, P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223,
View
DMP2305U-7 Diodes Incorporated, P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,
View
FQPF9P25 ON Semiconductor, P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F, QFET®
View
SI8401DB-T1-E1 - Tags
English
