IXTH50P10
IXTH50P10
Part Number IXTH50P10 Manufacturer IXYS Description MOSFET P-CH 100V 50A TO-247AD Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 100V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
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IXTH50P10 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(H,T)50P10 Standard Package 30 Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
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