TPH1R712MD,L1Q
TPH1R712MD,L1Q
Part Number TPH1R712MD,L1Q Description MOSFET P-CH 20V 60A 8SOP ADV Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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TPH1R712MD,L1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH1R712MD Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 182nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 10900pF @ 10V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN
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