Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA459EDJ-T1-GE3

SIA459EDJ-T1-GE3

SIA459EDJ-T1-GE3

Part NumberSIA459EDJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 9A SC70

DatasheetSIA459EDJ-T1-GE3

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA459EDJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA459EDJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA459EDJ-T1-GE3.
We are offering SIA459EDJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA459EDJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA459EDJ-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	885pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.9W (Ta), 15.6W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA459EDJ-T1-GE3 - Related Products

	SI7309DN-T1-GE3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTH10P50P	IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
	ZVP3310A	Diodes Incorporated, P-Channel 100V 140mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	IRF9530NSTRLPBF	Infineon Technologies, P-Channel 100V 14A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK, HEXFET®	View
	SQJ409EP-T1_GE3	Vishay Siliconix, P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SI4401FDY-T1-GE3	Vishay Siliconix, P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET® Gen III	View
	ZXMP10A18GTA	Diodes Incorporated, P-Channel 100V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	CWDM3011P TR13	Central Semiconductor Corp, P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	STD10P6F6	STMicroelectronics, P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI	View
	NTF5P03T3G	ON Semiconductor, P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223,	View
	CSD25484F4	Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	DMP45H150DHE-13	Diodes Incorporated, P-Channel 450V 250mA (Tc) 13.9W (Tc) Surface Mount SOT-223,	View

SIA459EDJ-T1-GE3 - Tags

SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 PDF SIA459EDJ-T1-GE3 datasheet SIA459EDJ-T1-GE3 specification SIA459EDJ-T1-GE3 image SIA459EDJ-T1-GE3 India Renesas Electronics India SIA459EDJ-T1-GE3 buy SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 price SIA459EDJ-T1-GE3 distributor SIA459EDJ-T1-GE3 supplier SIA459EDJ-T1-GE3 wholesales