Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTH76P10T

IXTH76P10T

IXTH76P10T

Part NumberIXTH76P10T

ManufacturerIXYS

DescriptionMOSFET P-CH 100V 76A TO-247

DatasheetIXT(A,H,P)76P10T

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

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IXTH76P10T - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(A,H,P)76P10T
Standard Package	30
Manufacturer	IXYS
Series	TrenchP™
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	197nC @ 10V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	13700pF @ 25V
FET Feature	-
Power Dissipation (Max)	298W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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