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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB23N15DPbF, IRFS(L)23N15DPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 600V 7.3A (Tc) 89W (Tc) Surface Mount DPAK, HiPerFET™, Polar™
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IXYS, N-Channel 300V 210A (Tc) 1890W (Tc) Surface Mount PLUS264™, HiPerFET™, Polar3™
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IXYS, N-Channel 200V 90A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™
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IRF740STRLPBF
Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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IPP086N10N3GXKSA1
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Vishay Siliconix, N-Channel 30V 16A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®
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FDB045AN08A0-F085
ON Semiconductor, N-Channel 75V 19A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®
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TSM80N1R2CH C5G
Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK),
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