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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 75
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN8R0-40BS,118
Nexperia USA Inc., N-Channel 40V 77A (Tc) 86W (Tc) Surface Mount D2PAK,
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ON Semiconductor, N-Channel 25V 24A (Ta), 40A (Tc) 3W (Ta), 60W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®, SyncFET™
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IRL620STRLPBF
Vishay Siliconix, N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,
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TSM230N06CP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 34A (Tc) 104W (Tc) Surface Mount TO-252, (D-Pak),
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STB20N95K5
STMicroelectronics, N-Channel 950V 17.5A (Tc) 250W (Tc) Surface Mount D2PAK, SuperMESH5™
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STB60NF06T4
STMicroelectronics, N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK, STripFET™ II
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BSC082N10LSGATMA1
Infineon Technologies, N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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Infineon Technologies, N-Channel 100V 60A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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Infineon Technologies, N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
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DMN26D0UT-7
Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,
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IRFH7914TRPBF
Infineon Technologies, N-Channel 30V 15A (Ta), 35A (Tc) 3.1W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®
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SIS454DN-T1-GE3
Vishay Siliconix, N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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