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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 75
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB, HEXFET®
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SQJA72EP-T1_GE3
Vishay Siliconix, N-Channel 100V 37A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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STB5N80K5
STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™
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IPP100N08N3GXKSA1
Infineon Technologies, N-Channel 80V 70A (Tc) 100W (Tc) Through Hole PG-TO220-3, OptiMOS™
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NTR4503NT1G
ON Semiconductor, N-Channel 30V 1.5A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236),
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2N7002P,235
Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB,
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Infineon Technologies, N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®
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IPD038N06N3GATMA1
Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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IRFS52N15DTRLP
Infineon Technologies, N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK, HEXFET®
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NVTFS4C05NWFTAG
ON Semiconductor, N-Channel 30V 22A (Ta), 102A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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