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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR7807ZPbF, IRLU7807ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6015FNX
Rohm Semiconductor, N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-220FM,
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STF3N62K3
STMicroelectronics, N-Channel 620V 2.7A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH3™
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SIHH26N60EF-T1-GE3
Vishay Siliconix, N-Channel 600V 24A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,
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STH410N4F7-2AG
STMicroelectronics, N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F7
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CSD18512Q5B
Texas Instruments, N-Channel 40V 211A (Tc) 139W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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IXFX120N20
IXYS, N-Channel 200V 120A (Tc) 560W (Tc) Through Hole PLUS247™-3, HiPerFET™
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STI28N60M2
STMicroelectronics, N-Channel 600V 22A (Tc) 170W (Tc) Through Hole I2PAK (TO-262), MDmesh™ M2
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NVD5C684NLT4G
ON Semiconductor, N-Channel 60V 38A (Tc) 27W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101
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PSMN063-150D,118
Nexperia USA Inc., N-Channel 150V 29A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™
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IRF730SPBF
Vishay Siliconix, N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,
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IPD60R400CEAUMA1
Infineon Technologies, N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252, CoolMOS™ CE
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DMT10H010SPS-13
Diodes Incorporated, N-Channel 100V 10.7A (Ta), 113A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8,
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