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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR7807ZPbF, IRLU7807ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TPN22006NH,LQ
Toshiba Semiconductor and Storage, N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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FDMS86250
ON Semiconductor, N-Channel 150V 6.7A (Ta), 20A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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STW6N90K5
STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Through Hole TO-247, MDmesh™ K5
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IXTQ26N50P
IXYS, N-Channel 500V 26A (Tc) 400W (Tc) Through Hole TO-3P, PolarHV™
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TK17E80W,S1X
Toshiba Semiconductor and Storage, N-Channel 800V 17A (Ta) 180W (Tc) Through Hole TO-220, DTMOSIV
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TK39N60X,S1F
Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV-H
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PHB20N06T,118
Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Surface Mount D2PAK, TrenchMOS™
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FDBL9401L-F085
ON Semiconductor, N-Channel 40V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF, Automotive, AEC-Q101, PowerTrench®
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IRFR3806TRPBF
Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D-Pak, HEXFET®
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RK7002BMT116
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount SST3,
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IRF840APBF
Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,
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FQPF6N80C
ON Semiconductor, N-Channel 800V 5.5A (Tc) 51W (Tc) Through Hole TO-220F, QFET®
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