SISS40DN-T1-GE3
SISS40DN-T1-GE3
Part Number SISS40DN-T1-GE3 Description MOSFET N-CH 100V 36.5A PPAK 1212 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 36.5A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS40DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS40DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS40DN-T1-GE3.
We are offering SISS40DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS40DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS40DN Standard Package 3000 Manufacturer Vishay Siliconix Series ThunderFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 36.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 845pF @ 50V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS40DN-T1-GE3 - Related ProductsMore >>
IPB009N03LGATMA1 Infineon Technologies, N-Channel 30V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
View
DMN26D0UT-7 Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,
View
SI7108DN-T1-E3 Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SUP90140E-GE3 Vishay Siliconix, N-Channel 200V 90A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
View
DMN3051L-7 Diodes Incorporated, N-Channel 30V 5.8A (Ta) 700mW (Ta) Surface Mount SOT-23-3,
View
SUM90N10-8M2P-E3 Vishay Siliconix, N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
SI4634DY-T1-GE3 Vishay Siliconix, N-Channel 30V 24.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
View
STD13NM60N STMicroelectronics, N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount DPAK, MDmesh™ II
View
BSC190N15NS3GATMA1 Infineon Technologies, N-Channel 150V 50A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
SI7108DN-T1-GE3 Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
STW21N90K5 STMicroelectronics, N-Channel 900V 18.5A (Tc) 250W (Tc) Through Hole TO-247-3, SuperMESH5™
View
TK100E06N1,S1X Toshiba Semiconductor and Storage, N-Channel 60V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H
View
SISS40DN-T1-GE3 - Tags
English
