Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFH6N100F

IXFH6N100F

IXFH6N100F

Part NumberIXFH6N100F

ManufacturerIXYS-RF

DescriptionMOSFET N-CH 1000V 6A TO247

DatasheetIXFH6N100F, IXFT6N100F

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)

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IXFH6N100F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFH6N100F, IXFT6N100F
Standard Package	30
Manufacturer	IXYS-RF
Series	HiPerRF™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 25V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXFH)
Package / Case	TO-247-3

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IXFH6N100F - Tags

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