Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFJ26N50P3

IXFJ26N50P3

IXFJ26N50P3

Part NumberIXFJ26N50P3

ManufacturerIXYS

DescriptionMOSFET N-CH 500V 14A TO220

DatasheetIXFJ26N50P3 Preliminary

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 14A (Tc) 180W (Tc) Through Hole TO-247

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IXFJ26N50P3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFJ26N50P3 Preliminary
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™, Polar3™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	265mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2220pF @ 25V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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IXFJ26N50P3 - Tags

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