Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFP56N30X3M

IXFP56N30X3M

IXFP56N30X3M

Part NumberIXFP56N30X3M

ManufacturerIXYS

DescriptionFET N-CHANNEL

DatasheetIXFP56N30X3M

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 56A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab

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IXFP56N30X3M - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFP56N30X3M
Standard Package	50
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	27mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3750pF @ 25V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Isolated Tab
Package / Case	TO-220-3 Full Pack, Isolated Tab

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IXFP56N30X3M - Tags

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