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DMT10H015LSS-13

DMT10H015LSS-13

Part NumberDMT10H015LSS-13

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 100V 8.3A

DatasheetDMT10H015LSS

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO

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DMT10H015LSS-13 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMT10H015LSS
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1871pF @ 50V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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DMT10H015LSS-13 - Tags

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