SQM200N04-1M7L_GE3
SQM200N04-1M7L_GE3
Part Number SQM200N04-1M7L_GE3 Description MOSFET N-CH 40V 200A TO-263 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7
To learn about the specification of SQM200N04-1M7L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQM200N04-1M7L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQM200N04-1M7L_GE3.
We are offering SQM200N04-1M7L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQM200N04-1M7L_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM200N04-1M7L-GE3 Standard Package 800 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 291nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11168pF @ 20V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
SQM200N04-1M7L_GE3 - Related ProductsMore >>
SPP04N80C3XKSA1 Infineon Technologies, N-Channel 800V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3, CoolMOS™
View
FCA35N60 ON Semiconductor, N-Channel 600V 35A (Tc) 312.5W (Tc) Through Hole TO-3PN, SuperFET™
View
R6011ENX Rohm Semiconductor, N-Channel 600V 11A (Tc) 40W (Tc) Through Hole TO-220FM,
View
STWA48N60DM2 STMicroelectronics, N-Channel 600V 40A (Tc) 300W (Tc) Through Hole TO-247 Long Leads, MDmesh™ DM2
View
IRF3415PBF Infineon Technologies, N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
SIHU4N80E-GE3 Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251),
View
TPH3R003PL,LQ Toshiba Semiconductor and Storage, N-Channel 30V 88A (Tc) 90W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
SIS410DN-T1-GE3 Vishay Siliconix, N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FDG327N ON Semiconductor, N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
View
RD3L220SNFRATL Rohm Semiconductor, N-Channel 60V 22A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
View
CSD13306WT Texas Instruments, N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™
View
TN0606N3-G Microchip Technology, N-Channel 60V 500mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
SQM200N04-1M7L_GE3 - Tags
English
