SI2308BDS-T1-E3
SI2308BDS-T1-E3
Part Number SI2308BDS-T1-E3 Description MOSFET N-CH 60V 2.3A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2308BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2308BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2308BDS-T1-E3.
We are offering SI2308BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2308BDS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2308BDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 190pF @ 30V FET Feature - Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2308BDS-T1-E3 - Related ProductsMore >>
IPT012N08N5ATMA1 Infineon Technologies, N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
SQJA86EP-T1_GE3 Vishay Siliconix, N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
DMN62D0U-7 Diodes Incorporated, N-Channel 60V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23,
View
TSM4NB60CH C5G Taiwan Semiconductor Corporation, N-Channel 600V 4A 50W (Tc) Through Hole TO-251 (IPAK),
View
STP12N60M2 STMicroelectronics, N-Channel 600V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ M2
View
MCAC53N06Y-TP Micro Commercial Co, N-Channel 60V 53A (Tc) 70W (Tc) Surface Mount DFN5060,
View
SIHB21N65EF-GE3 Vishay Siliconix, N-Channel 650V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263),
View
IPD25CN10NGATMA1 Infineon Technologies, N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
IRFBA90N20DPBF Infineon Technologies, N-Channel 200V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA), HEXFET®
View
SSM3K56MFV,L3F Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII-H
View
IXTH1N300P3HV IXYS, N-Channel 3000V 1A (Tc) 195W (Tc) Through Hole TO-247HV,
View
IRFRC20TRRPBF Vishay Siliconix, N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
View
SI2308BDS-T1-E3 - Tags
English
