SI2308BDS-T1-E3
SI2308BDS-T1-E3
Part Number SI2308BDS-T1-E3
Description MOSFET N-CH 60V 2.3A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2308BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2308BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2308BDS-T1-E3.
We are offering SI2308BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2308BDS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2308BDS
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 30V
FET Feature -
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SI2308BDS-T1-E3 - Related ProductsMore >>
STB100N6F7
STMicroelectronics, N-Channel 60V 100A (Tc) 125W (Tc) Surface Mount D2PAK, STripFET™ F7
View
IPB80N06S2H5ATMA2
Infineon Technologies, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
STD60NF55LT4
STMicroelectronics, N-Channel 55V 60A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
View
IPB200N15N3GATMA1
Infineon Technologies, N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
IXFA36N20X3
IXYS, N-Channel 200V 36A (Tc) 176W (Tc) Surface Mount TO-263AA, HiPerFET™
View
IPB027N10N3GATMA1
Infineon Technologies, N-Channel 100V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
TPH11003NL,LQ
Toshiba Semiconductor and Storage, N-Channel 30V 32A (Ta) 1.6W (Ta), 21W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
View
IAUT300N08S5N014ATMA1
Infineon Technologies, N-Channel 80V 300A (DC) 300W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
View
BSS159NH6906XTSA1
Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
FQD4N25TM-WS
ON Semiconductor, N-Channel 250V 3A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®
View
R6024ENX
Rohm Semiconductor, N-Channel 600V 24A (Tc) 40W (Tc) Through Hole TO-220FM,
View
IXFP14N60P
IXYS, N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-220AB, HiPerFET™, PolarHT™
View
SI2308BDS-T1-E3 - Tags