Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFQ30N60X

IXFQ30N60X

IXFQ30N60X

Part NumberIXFQ30N60X

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 30A TO3P

DatasheetIXF(T,Q,H)30N60X

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P

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IXFQ30N60X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXF(T,Q,H)30N60X
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	155mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2270pF @ 25V
FET Feature	-
Power Dissipation (Max)	500W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3

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IXFQ30N60X - Tags

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