IXFT6N100F
IXFT6N100F
Part Number IXFT6N100F Description MOSFET N-CH 1000V 6A TO268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 6A (Tc) 180W (Tc) Surface Mount TO-268 (IXFT)
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IXFT6N100F - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFH6N100F, IXFT6N100F Standard Package 30 Manufacturer IXYS-RF Series HiPerRF™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 (IXFT) Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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