Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFY4N60P3

IXFY4N60P3

IXFY4N60P3

Part NumberIXFY4N60P3

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 4A TO-252

DatasheetIXFx4N60P3

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252

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IXFY4N60P3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFx4N60P3
Standard Package	70
Manufacturer	IXYS
Series	HiPerFET™, Polar3™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.9nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 25V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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IXFY4N60P3 - Tags

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