Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTH20N65X

IXTH20N65X

IXTH20N65X

Part NumberIXTH20N65X

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 20A TO-247

DatasheetIXTx20N65X

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20A (Tc) 320W (Tc) Through Hole TO-247 (IXTH)

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IXTH20N65X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTx20N65X
Standard Package	30
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1390pF @ 25V
FET Feature	-
Power Dissipation (Max)	320W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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IXTH20N65X - Tags

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