IXTP18P10T
IXTP18P10T
Part Number IXTP18P10T Manufacturer IXYS Description MOSFET P-CH 100V 18A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB
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IXTP18P10T - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(Y,A,P)18P10T Standard Package 50 Manufacturer IXYS Series TrenchP™ Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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