IXTR170P10P
IXTR170P10P
Part Number IXTR170P10P
Manufacturer IXYS
Description MOSFET P-CH 100V 108A ISOPLUS247
Package / Case ISOPLUS247™
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™
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IXTR170P10P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXTR170P10P
Standard Package 30
Manufacturer IXYS
Series PolarP™
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12600pF @ 25V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case ISOPLUS247™
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