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IXTR170P10P

IXTR170P10P

Part NumberIXTR170P10P

ManufacturerIXYS

DescriptionMOSFET P-CH 100V 108A ISOPLUS247

DatasheetIXTR170P10P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™

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IXTR170P10P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTR170P10P
Standard Package	30
Manufacturer	IXYS
Series	PolarP™
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13mOhm @ 85A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12600pF @ 25V
FET Feature	-
Power Dissipation (Max)	312W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	ISOPLUS247™

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