KSD2012GTU
KSD2012GTU
Part Number KSD2012GTU Description TRANS NPN 60V 3A TO-220F Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F
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KSD2012GTU - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet KSD2012 Standard Package 1000 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 5V Power - Max 25W Frequency - Transition 3MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F
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