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KSD2012GTU

KSD2012GTU

Part NumberKSD2012GTU

ManufacturerON Semiconductor

DescriptionTRANS NPN 60V 3A TO-220F

DatasheetKSD2012

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F

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KSD2012GTU - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	KSD2012
Standard Package	1000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 2A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 500mA, 5V
Power - Max	25W
Frequency - Transition	3MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220F

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KSD2012GTU - Tags

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