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MJE200G

MJE200G

Part NumberMJE200G

ManufacturerON Semiconductor

DescriptionTRANS NPN 40V 5A TO225AA

DatasheetMJE200,210

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole TO-225AA

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MJE200G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJE200,210
Standard Package	500
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	5A
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V
Power - Max	15W
Frequency - Transition	65MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-225AA
Base Part Number	MJE200

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