Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
BFP520H6327XTSA1	Infineon Technologies, RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mount PG-SOT343-4,	View
BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
BFP420H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 35mA 25GHz 160mW Surface Mount SOT-343,	View
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
2N4427	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 500MHz 1W Through Hole TO-39,	View
BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View
BFU530XRR	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFP760H6327XTSA1	Infineon Technologies, RF Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343,	View
BFP420FH6327XTSA1	Infineon Technologies, RF Transistor NPN 5.5V 35mA 25GHz 160mW Surface Mount 4-TSFP,	View

MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)