Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
2SC5227A-5-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
2N2857	Central Semiconductor Corp, RF Transistor NPN 15V 40mA 1.9GHz 200mW Through Hole TO-72,	View
BFP183WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8.5GHz 450mW Surface Mount PG-SOT343-4,	View
BFP640ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343,	View
BFP720ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 43GHz 100mW Surface Mount SOT-343,	View
HFA3046BZ	Renesas Electronics America Inc., RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 14-SOIC,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
MMBTH10LT3G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
CMUT5179 TR	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 1.45GHz 250mW Surface Mount SOT-523,	View
HFA3127BZ	Renesas Electronics America Inc., RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC,	View

MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)