Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View
MCH4015-TL-H	ON Semiconductor, RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH,	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
BFP840FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.6V 35mA 85GHz 75mW Surface Mount 4-TSFP,	View
BFU610F,115	NXP USA Inc., RF Transistor NPN 5.5V 10mA 15GHz 136mW Surface Mount 4-DFP,	View
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFU725F/N1,115	NXP USA Inc., RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO,	View
BFU530WX	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
BFR181WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SOT323-3,	View
MMBTH10LT3G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
HFA3102BZ96	Renesas Electronics America Inc., RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC,	View

MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)