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MT3S113TU,LF

MT3S113TU,LF

Part NumberMT3S113TU,LF

ManufacturerToshiba Semiconductor and Storage

DescriptionRF TRANS NPN 5.3V 11.2GHZ UFM

DatasheetMT3S113TU

Package / Case3-SMD, Flat Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionRF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM

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MT3S113TU,LF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	11.2GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	12.5dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

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