Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	11.2GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	12.5dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

BFP620H7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4,	View
MCH4014-TL-H	ON Semiconductor, RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mount 4-MCPH,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
CPH6003A-TL-E	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH,	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
2SC5245A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 150mW Surface Mount 3-MCP,	View
BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View
HFA3102BZ96	Renesas Electronics America Inc., RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC,	View
BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
BFG35,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-223,	View
PBR941,215	NXP USA Inc., RF Transistor NPN 10V 50mA 8GHz 360mW Surface Mount TO-236AB (SOT23),	View

MT3S113TU,LF

Part NumberMT3S113TU,LF