Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2N5770
Standard Package	2500
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	900MHz
Noise Figure (dB Typ @ f)	6dB @ 60MHz
Gain	-
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 8mA, 1V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

MT3S113(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini,	View
2N2857	Central Semiconductor Corp, RF Transistor NPN 15V 40mA 1.9GHz 200mW Through Hole TO-72,	View
BFP740H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount SOT-343,	View
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
2SC4774T106S	Rohm Semiconductor, RF Transistor NPN 6V 50mA 800MHz 200mW Surface Mount UMT3,	View
MMBTH11	ON Semiconductor, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
BFR340FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 20mA 14GHz 75mW Surface Mount PG-TSFP-3,	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
2SC4915-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SSM,	View
BFP620H7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4,	View

2N5770

Part Number2N5770