Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113TU
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	11.2GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	12.5dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

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BFP183WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8.5GHz 450mW Surface Mount PG-SOT343-4,	View
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ON5088,115	NXP USA Inc., RF Transistor NPN 10V 40mA 55GHz 136mW Surface Mount 4-DFP,	View
2SC4915-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SSM,	View
BFU520XAR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
BFR740L3RHE6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3,	View

MT3S113TU,LF

Part NumberMT3S113TU,LF