Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S16U
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	2.4dB @ 1GHz
Gain	4.5dBi
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 1V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

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MT3S16U(TE85L,F)

Part NumberMT3S16U(TE85L,F)