Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S16U
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	2.4dB @ 1GHz
Gain	4.5dBi
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 1V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
BFR340FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 20mA 14GHz 75mW Surface Mount PG-TSFP-3,	View
MT3S113(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini,	View
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
BFR93AWH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323-3,	View
BLT81,115	NXP USA Inc., RF Transistor NPN 9.5V 500mA 900MHz 2W Surface Mount SOT-223,	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
2SC5227A-5-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFU530R	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View

MT3S16U(TE85L,F)

Part NumberMT3S16U(TE85L,F)