Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S20P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	16.5dB
Power - Max	1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

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BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
MCH4015-TL-H	ON Semiconductor, RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH,	View
55GN01MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP,	View
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI,	View
BFP720ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 43GHz 100mW Surface Mount SOT-343,	View
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View

MT3S20P(TE12L,F)

Part NumberMT3S20P(TE12L,F)