Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S20P
Standard Package	1000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	16.5dB
Power - Max	1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

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MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
BFP760H6327XTSA1	Infineon Technologies, RF Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343,	View
55GN01MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP,	View
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2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View
BFU725F/N1,115	NXP USA Inc., RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO,	View
BFU760F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 45GHz 220mW Surface Mount 4-DFP,	View
BFP183E7764HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT143-4,	View
BFP620H7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4,	View

MT3S20P(TE12L,F)

Part NumberMT3S20P(TE12L,F)