Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5085
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB ~ 16.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFP520H6327XTSA1	Infineon Technologies, RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mount PG-SOT343-4,	View
BFR193FH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3,	View
BFU590GX	NXP USA Inc., RF Transistor NPN 12V 200mA 8.5GHz 2W Surface Mount SOT-223,	View
BFP193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT343-4,	View
BFU610F,115	NXP USA Inc., RF Transistor NPN 5.5V 10mA 15GHz 136mW Surface Mount 4-DFP,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFP405H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount SOT-343,	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFQ18A,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-89-3,	View
2N5179	Central Semiconductor Corp, RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-72,	View

2SC5085-Y(TE85L,F)

Part Number2SC5085-Y(TE85L,F)