Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB35N65FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	70A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Power - Max	300W
Switching Energy	840µJ (on), 280µJ (off)
Input Type	Standard
Gate Charge	125nC
Td (on/off) @ 25°C	72ns/132ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	68ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

IRG4PF50WDPBF	Infineon Technologies, IGBT 900V 51A 200W Through Hole TO-247AC,	View
STGW60V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 80A 375W Through Hole TO-247,	View
STGW40V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 80A 283W Through Hole TO-247,	View
RGT16NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Surface Mount LPDS (TO-263S),	View
STGD10HF60KD	STMicroelectronics, IGBT 600V 18A 62.5W Surface Mount DPAK, Automotive, AEC-Q101	View
IKB40N65EF5ATMA1	Infineon Technologies, IGBT Trench Field Stop 650V 74A 250W Surface Mount PG-TO263-3, TrenchStop™ 5	View
IXGA30N120B3	IXYS, IGBT PT 1200V 60A 300W Surface Mount TO-263 (IXGA), GenX3™	View
STGF20NB60S	STMicroelectronics, IGBT 600V 24A 40W Through Hole TO-220FP, PowerMESH™	View
IXGP30N120B3	IXYS, IGBT PT 1200V 60A 300W Through Hole TO-220AB, GenX3™	View
RJH60F7DPQ-A0#T0	Renesas Electronics America, IGBT Trench 600V 90A 328.9W Through Hole TO-247A,	View
IXYH10N170CV1	IXYS, IGBT 1700V 36A 280W Through Hole TO-247 (IXYH), XPT™	View
FGH40N60SMDF	ON Semiconductor, IGBT Field Stop 600V 80A 349W Through Hole TO-247-3,	View

NGTB35N65FL2WG

Part NumberNGTB35N65FL2WG