NSV60600MZ4T1G


NSV60600MZ4T1G

Part NumberNSV60600MZ4T1G

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSV60600MZ4T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)6A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic350mV @ 600mA, 6A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 2V
Power - Max800mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-3
Base Part NumberNSS60600

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