NSVMUN531335DW1T1G

Part NumberNSVMUN531335DW1T1G

ManufacturerON Semiconductor

DescriptionTRANS PREBIAS NPN/PNP 50V 6TSSOP

DatasheetMUN531335DW1

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

To learn about the specification of NSVMUN531335DW1T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSVMUN531335DW1T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NSVMUN531335DW1T1G.
We are offering NSVMUN531335DW1T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NSVMUN531335DW1T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN531335DW1
Standard Package	3000
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	47kOhms, 2.2kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	187mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

NSVMUN531335DW1T1G - Related Products

More >>

DCX143EU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
UMC3NT1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353),	View
DMG963010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
PUMD10,125	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount 6-TSSOP,	View
DMG263010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B,	View
PUMD16,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
DMG963030R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
RN4611(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
RN4984FE,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,	View
RN4608(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
PUMD10,125	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount 6-TSSOP,	View
RN4606(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 300mW Surface Mount SM6,	View

NSVMUN531335DW1T1G - Tags

NSVMUN531335DW1T1G NSVMUN531335DW1T1G PDF NSVMUN531335DW1T1G datasheet NSVMUN531335DW1T1G specification NSVMUN531335DW1T1G image NSVMUN531335DW1T1G India Renesas Electronics India NSVMUN531335DW1T1G buy NSVMUN531335DW1T1G NSVMUN531335DW1T1G price NSVMUN531335DW1T1G distributor NSVMUN531335DW1T1G supplier NSVMUN531335DW1T1G wholesales