NTD3055L104-1G
NTD3055L104-1G
Part Number NTD3055L104-1G
Description MOSFET N-CH 60V 12A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Through Hole I-PAK
To learn about the specification of NTD3055L104-1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTD3055L104-1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTD3055L104-1G.
We are offering NTD3055L104-1G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTD3055L104-1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTD3055L104
Standard Package 75
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 48W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
NTD3055L104-1G - Related ProductsMore >>
IPSA70R2K0P7SAKMA1
Infineon Technologies, N-Channel 700V 3A 17.6W (Tc) Through Hole PG-TO251-3-347, CoolMOS™ P7
View
SSM3K15AFU,LF
Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSIII
View
FDD86252
ON Semiconductor, N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
STF27N60M2-EP
STMicroelectronics, N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
View
RS1G120MNTB
Rohm Semiconductor, N-Channel 40V 12A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,
View
PSMN2R8-40BS,118
Nexperia USA Inc., N-Channel 40V 100A (Tc) 211W (Tc) Surface Mount D2PAK,
View
RS1E180BNTB
Rohm Semiconductor, N-Channel 30V 60A (Tc) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,
View
ZXMN2B01FTA
Diodes Incorporated, N-Channel 20V 2.1A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
FDS3672
ON Semiconductor, N-Channel 100V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI4434DY-T1-GE3
Vishay Siliconix, N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
APT34N80B2C3G
Microsemi Corporation, N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2],
View
SIHG47N60EF-GE3
Vishay Siliconix, N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC,
View
NTD3055L104-1G - Tags