NTMS4807NR2G
NTMS4807NR2G
Part Number NTMS4807NR2G Description MOSFET N-CH 30V 9.1A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC
To learn about the specification of NTMS4807NR2G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTMS4807NR2G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTMS4807NR2G.
We are offering NTMS4807NR2G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTMS4807NR2G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTMS4807N Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.1mOhm @ 14.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 24V FET Feature - Power Dissipation (Max) 860mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)
NTMS4807NR2G - Related ProductsMore >>
IXFK150N30X3 IXYS, N-Channel 300V 150A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™
View
DMN6068SE-13 Diodes Incorporated, N-Channel 60V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223,
View
IPB70N04S406ATMA1 Infineon Technologies, N-Channel 40V 70A (Tc) 58W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
BSC110N06NS3GATMA1 Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
TK7P65W,RQ Toshiba Semiconductor and Storage, N-Channel 650V 6.8A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV
View
FDS3512 ON Semiconductor, N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
IRLML2803TRPBF Infineon Technologies, N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
TSM2N7002KCX RFG Taiwan Semiconductor Corporation, N-Channel 60V 300mA (Ta) 300mW (Ta) Surface Mount SOT-23,
View
SI8824EDB-T2-E1 Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
STF6N62K3 STMicroelectronics, N-Channel 620V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH3™
View
IPI086N10N3GXKSA1 Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3, OptiMOS™
View
FDB3682 ON Semiconductor, N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Surface Mount TO-263, PowerTrench®
View
NTMS4807NR2G - Tags
English
