NTTFS3A08PZTWG

Part NumberNTTFS3A08PZTWG

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTTFS3A08PZ
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	6.7mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	5000pF @ 10V
FET Feature	-
Power Dissipation (Max)	840mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WDFN (3.3x3.3)
Package / Case	8-PowerWDFN

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