SIA431DJ-T1-GE3
SIA431DJ-T1-GE3
Part Number SIA431DJ-T1-GE3
Description MOSFET P-CH 20V 12A PPAK SC70-6
Package / Case PowerPAK® SC-70-6
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA431DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA431DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA431DJ-T1-GE3.
We are offering SIA431DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA431DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA431DJ
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 10V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
SIA431DJ-T1-GE3 - Related ProductsMore >>
IXTQ36P15P
IXYS, P-Channel 150V 36A (Tc) 300W (Tc) Through Hole TO-3P, PolarP™
View
SSM3J356R,LF
Toshiba Semiconductor and Storage, P-Channel 60V 2A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
RZL035P01TR
Rohm Semiconductor, P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6,
View
FDC610PZ
ON Semiconductor, P-Channel 30V 4.9A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
BSS84-7-F
Diodes Incorporated, P-Channel 50V 130mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
NTTFS5116PLTWG
ON Semiconductor, P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
SIA437DJ-T1-GE3
Vishay Siliconix, P-Channel 20V 29.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
IRF9Z34PBF
Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,
View
DMP3105LVT-7
Diodes Incorporated, P-Channel 30V 3.1A (Ta) 1.15W (Ta) Surface Mount TSOT-23-6,
View
FQB22P10TM
ON Semiconductor, P-Channel 100V 22A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
FDN304P
ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
TPS1101D
Texas Instruments, P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC,
View
SIA431DJ-T1-GE3 - Tags