NTTFS6H850NTAG

Part NumberNTTFS6H850NTAG

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTTFS6H850N
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1140pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WDFN (3.3x3.3)
Package / Case	8-PowerWDFN

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