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FCP150N65F

FCP150N65F

Part NumberFCP150N65F

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 650V 24A TO220

DatasheetFCP150N65F

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 24A (Tc) 298W (Tc) Through Hole TO-220-3

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FCP150N65F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FCP150N65F
Standard Package	800
Manufacturer	ON Semiconductor
Series	HiPerFET™, Polar™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3737pF @ 100V
FET Feature	-
Power Dissipation (Max)	298W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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