NVR1P02T1G
NVR1P02T1G
Part Number NVR1P02T1G
Description MOSFET P-CH 20V 1A SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3
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NVR1P02T1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet N(T,V)R1P02
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 5V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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