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NVR1P02T1G

NVR1P02T1G

Part NumberNVR1P02T1G

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 20V 1A SOT-23-3

DatasheetN(T,V)R1P02

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3

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NVR1P02T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	N(T,V)R1P02
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	165pF @ 5V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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